DIODES MMDT2227M-7

DIODES · Transistors (BJTs) · MPN MMDT2227M-7

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Specifications

Current - Collector Cutoff10nA
DC Current Gain100
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))300mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 60V 600mA 300MHz 300mW Surface Mount SOT-26

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