DIODES MMDT2222VQ-7

DIODES · Transistors (BJTs) · MPN MMDT2222VQ-7

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Specifications

Current - Collector Cutoff10uA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))1V
typeNPN
Number2 NPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

150mW 40V NPN 600mA SOT-563 Bipolar Transistor Arrays RoHS

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