DIODES MMDT2222V-7

DIODES · Transistors (BJTs) · MPN MMDT2222V-7

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Specifications

Current - Collector Cutoff10nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation150mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))300mV
typeNPN
Number2 NPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150mW Surface Mount SOT-563

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