DIODES MMBTH10-7-F

DIODES · Transistors (BJTs) · MPN MMBTH10-7-F

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO25V
DC Current Gain60
Pd - Power Dissipation300mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)650MHz
Vce Saturation(VCE(sat))500mV
typeNPN

Technical details

25V 60 300mW 50mA NPN SOT-23 Bipolar RF Transistors RoHS

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