DIODES MMBTA55-7-F

DIODES · Transistors (BJTs) · MPN MMBTA55-7-F

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO4V
DC Current Gain100
Pd - Power Dissipation310mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 310mW Surface Mount SOT-23

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