DIODES MMBTA42-7-F

DIODES · Transistors (BJTs) · MPN MMBTA42-7-F

No reviews yet — be the first to review DIODES MMBTA42-7-F.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
DC Current Gain40
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 300mW Surface Mount SOT-23

Related Transistors (BJTs)