DIODES MMBT4401T-7-F

DIODES · Transistors (BJTs) · MPN MMBT4401T-7-F

No reviews yet — be the first to review DIODES MMBT4401T-7-F.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation150mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 150mW Surface Mount SOT-523

Related Transistors (BJTs)