DIODES MMBT3904T-7-F

DIODES · Transistors (BJTs) · MPN MMBT3904T-7-F

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation150mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 100MHz 150mW Surface Mount SOT-523

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