DIODES MMBT3904LP-7

DIODES · Transistors (BJTs) · MPN MMBT3904LP-7

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 1000mW Surface Mount DFN-3(1x0.6)

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