DIODES MMBT2907A-13-F

DIODES · Transistors (BJTs) · MPN MMBT2907A-13-F

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation310mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))400mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 310mW Surface Mount SOT23

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