DIODES MMBT2222ALP4-7B

DIODES · Transistors (BJTs) · MPN MMBT2222ALP4-7B

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain35
Pd - Power Dissipation460mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 40V 600mA 460mW Surface Mount DFN-3(1x0.6)

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