DIODES MMBT123S-7-F

DIODES · Transistors (BJTs) · MPN MMBT123S-7-F

No reviews yet — be the first to review DIODES MMBT123S-7-F.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO18V
Emitter-Base Voltage VEBO5V
DC Current Gain150
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 18V 1A 100MHz 300mW Surface Mount SOT-23

Related Transistors (BJTs)