DIODES MJD340-13

DIODES · Transistors (BJTs) · MPN MJD340-13

No reviews yet — be the first to review DIODES MJD340-13.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO7V
DC Current Gain30
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 300V 0.5A 10MHz 15W Surface Mount DPAK-3

Related Transistors (BJTs)