DIODES MJD32CUQ-13

DIODES · Transistors (BJTs) · MPN MJD32CUQ-13

No reviews yet — be the first to review DIODES MJD32CUQ-13.

Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain25
Pd - Power Dissipation15W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.2V

Technical details

Bipolar (BJT) Transistor PNP 100V 3A 3MHz 15W Surface Mount TO-252(DPAK)

Related Transistors (BJTs)