DIODES · Transistors (BJTs) · MPN MJD31CHQ-13
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 3MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 7V |
| Pd - Power Dissipation | 2.6W |
| Current - Collector(Ic) | 3A |
| Vce Saturation(VCE(sat)) | 1.2V |
| Operating Temperature | -55℃~+150℃ |
100V 3A TO-252(DPAK) Single Bipolar Transistors RoHS