DIODES MJD31CHQ-13

DIODES · Transistors (BJTs) · MPN MJD31CHQ-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation2.6W
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))1.2V
Operating Temperature-55℃~+150℃

Technical details

100V 3A TO-252(DPAK) Single Bipolar Transistors RoHS

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