DIODES MJD31C-13

DIODES · Transistors (BJTs) · MPN MJD31C-13

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6V
DC Current Gain25
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.2V

Technical details

Bipolar (BJT) Transistor NPN 100V 3A 3MHz 15W Surface Mount DPAK-3

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