DIODES FZT949

DIODES · Transistors (BJTs) · MPN FZT949

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
DC Current Gain75
Pd - Power Dissipation3W
Number1 PNP
typePNP
Current - Collector(Ic)5.5A
Vce Saturation(VCE(sat))140mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 5.5A 100MHz 3W Surface Mount SOT-223

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