DIODES FZT857TA

DIODES · Transistors (BJTs) · MPN FZT857TA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)3.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))155mV

Technical details

Bipolar (BJT) Transistor NPN 300V 3.5A 80MHz 3W Surface Mount SOT-223

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