DIODES FZT857

DIODES · Transistors (BJTs) · MPN FZT857

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO300V
DC Current Gain100
Pd - Power Dissipation3W
typeNPN
Current - Collector(Ic)3.5A
Vce Saturation(VCE(sat))155mV
Operating Temperature-55℃~+150℃

Technical details

300V 100 NPN 3.5A SOT-223 Single Bipolar Transistors RoHS

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