DIODES FZT851QTA

DIODES · Transistors (BJTs) · MPN FZT851QTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

60V 100 1 NPN NPN 6A SOT-223 Single Bipolar Transistors RoHS

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