DIODES FZT849TA

DIODES · Transistors (BJTs) · MPN FZT849TA

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)7A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))188mV

Technical details

Bipolar (BJT) Transistor NPN 30V 7A 3W Surface Mount SOT-223

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