DIODES FZT688BTA

DIODES · Transistors (BJTs) · MPN FZT688BTA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation1.6W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))180mV

Technical details

Bipolar (BJT) Transistor NPN 12V 4A 150MHz 1.6W Surface Mount SOT-223

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