DIODES FZT658

DIODES · Transistors (BJTs) · MPN FZT658

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO7V
DC Current Gain40
Pd - Power Dissipation1.6W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 400V 0.5A 50MHz 1.6W Surface Mount SOT-223

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