DIODES FZT653QTA

DIODES · Transistors (BJTs) · MPN FZT653QTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain55
Pd - Power Dissipation1.2W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 100V 2A 175MHz 1.2W Surface Mount SOT-223

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