DIODES FMMTA14TA

DIODES · Transistors (BJTs) · MPN FMMTA14TA

No reviews yet — be the first to review DIODES FMMTA14TA.

Specifications

Current - Collector Cutoff100nA
Vbe On(VBE(on))2V
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO10V
DC Current Gain20000
Pd - Power Dissipation330mW
typeNPN
Current - Collector(Ic)300mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))900mV@100mA,0.1mA

Technical details

40V 20000 NPN 300mA SOT-23 Single Bipolar Transistors RoHS

Related Transistors (BJTs)