DIODES FMMT717TA

DIODES · Transistors (BJTs) · MPN FMMT717TA

No reviews yet — be the first to review DIODES FMMT717TA.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)110MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO7V
DC Current Gain180
Pd - Power Dissipation625mW
Number1 PNP
typePNP
Current - Collector(Ic)2.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))17mV

Technical details

Bipolar (BJT) Transistor PNP 12V 2.5A 110MHz 625mW Surface Mount SOT-23

Related Transistors (BJTs)