DIODES FMMT558TA

DIODES · Transistors (BJTs) · MPN FMMT558TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 400V 150mA 50MHz 500mW Surface Mount SOT-23

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