DIODES FMMT558

DIODES · Transistors (BJTs) · MPN FMMT558

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO400V
DC Current Gain100
Pd - Power Dissipation500mW
typePNP
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

400V 100 PNP 150mA SOT-23 Single Bipolar Transistors RoHS

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