DIODES FMMT494QTA

DIODES · Transistors (BJTs) · MPN FMMT494QTA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO7V
DC Current Gain60
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 120V 1A 100MHz 500mW Surface Mount TO-236-3

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