DIODES FMMT411TD

DIODES · Transistors (BJTs) · MPN FMMT411TD

No reviews yet — be the first to review DIODES FMMT411TD.

Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)40MHz
Collector - Emitter Voltage VCEO15V
DC Current Gain100
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation800mW
Current - Collector(Ic)900mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

15V 100 900mA SOT-23(TYPEDN) Single Bipolar Transistors RoHS

Related Transistors (BJTs)