DIODES FCX658ATA

DIODES · Transistors (BJTs) · MPN FCX658ATA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO7.8V
DC Current Gain85
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))165mV

Technical details

Bipolar (BJT) Transistor NPN 400V 500mA 90MHz 1W Surface Mount SOT-89

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