DIODES FCX555TA

DIODES · Transistors (BJTs) · MPN FCX555TA

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Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)700mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 150V 0.7A 100MHz 1.5W Surface Mount SOT-89

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