DIODES DXTP3C60PSQ-13

DIODES · Transistors (BJTs) · MPN DXTP3C60PSQ-13

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)135MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain250
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation5W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))360mV
Operating Temperature-55℃~+175℃

Technical details

Bipolar (BJT) Transistor 60V 3A 135MHz 5W Surface Mount PowerDI-8(5x6)

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