DIODES DXTP3C100PD-13

DIODES · Transistors (BJTs) · MPN DXTP3C100PD-13

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Specifications

Current - Collector Cutoff100nA
DC Current Gain170
Collector - Emitter Voltage VCEO100V
Pd - Power Dissipation1.76W
Emitter-Base Voltage VEBO7V
Transition frequency(fT)100MHz
typePNP
Vce Saturation(VCE(sat))110mV
Current - Collector(Ic)3A
Operating Temperature-55℃~+175℃

Technical details

170 100V 1.76W PNP 3A DFN-8 Bipolar Transistor Arrays RoHS

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