DIODES DXTP03200BP5-13

DIODES · Transistors (BJTs) · MPN DXTP03200BP5-13

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)105MHz
Collector - Emitter Voltage VCEO200V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation3.2W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))130mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 200V 2A 105MHz 3.2W PowerDI-5

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