DIODES DXTN5860DFDB-7

DIODES · Transistors (BJTs) · MPN DXTN5860DFDB-7

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)115MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain280
Pd - Power Dissipation690mW
typeNPN
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))-
Operating Temperature-55℃~+150℃

Technical details

60V 280 NPN 6A Single Bipolar Transistors RoHS

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