DIODES · Transistors (BJTs) · MPN DXTN5840CFDB-7
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 1.25W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 5A |
| Vce Saturation(VCE(sat)) | 145mV |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 40V 150MHz 1.25W Surface Mount DFN-3(2x2)