DIODES · Transistors (BJTs) · MPN DXTN5820DFDB-7
No reviews yet — be the first to review DIODES DXTN5820DFDB-7.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 80MHz |
| Collector - Emitter Voltage VCEO | 20V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 300 |
| Pd - Power Dissipation | 1.25W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 6A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 275mV |
Bipolar (BJT) Transistor NPN 20V 6A 80MHz 1.25W Surface Mount UDFN2020-3