DIODES DXTN3C60PSQ-13

DIODES · Transistors (BJTs) · MPN DXTN3C60PSQ-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain200
Pd - Power Dissipation2.5W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+175℃
Vce Saturation(VCE(sat))270mV

Technical details

Bipolar (BJT) Transistor NPN 60V 3A 140MHz 2.5W Surface Mount PowerDI5060-8

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