DIODES DXTN3C100PSQ-13

DIODES · Transistors (BJTs) · MPN DXTN3C100PSQ-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain150
Pd - Power Dissipation2.5W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+175℃
Vce Saturation(VCE(sat))330mV

Technical details

Bipolar (BJT) Transistor NPN 100V 3A 140MHz Surface Mount PowerDI-8(5x6)

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