DIODES DXTN07100BP5-13

DIODES · Transistors (BJTs) · MPN DXTN07100BP5-13

No reviews yet — be the first to review DIODES DXTN07100BP5-13.

Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain300
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation3.2W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 100V 2A 175MHz PowerDI-5

Related Transistors (BJTs)