DIODES DXTN07100BFG-7

DIODES · Transistors (BJTs) · MPN DXTN07100BFG-7

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain55
Pd - Power Dissipation2.1W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+175℃

Technical details

Bipolar (BJT) Transistor NPN 100V 2A 175MHz 2.1W Surface Mount PowerDI3333-8

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