DIODES DXTC3C100PDQ-13

DIODES · Transistors (BJTs) · MPN DXTC3C100PDQ-13

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO100V
Pd - Power Dissipation1.47W
Emitter-Base Voltage VEBO7V
Transition frequency(fT)130MHz
typeNPN+PNP
Vce Saturation(VCE(sat))330mV
Number1 NPN + 1 PNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃

Technical details

100V 1.47W NPN+PNP 3A PowerDI5060-8(TYPEUxD) Bipolar Transistor Arrays RoHS

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