DIODES DXT790AP5-13

DIODES · Transistors (BJTs) · MPN DXT790AP5-13

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation3.2W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))450mV

Technical details

Bipolar (BJT) Transistor PNP 40V 3A 100MHz 3.2W PowerDI-5

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