DIODES DXT651Q-13

DIODES · Transistors (BJTs) · MPN DXT651Q-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 60V 3A 200MHz 2W Surface Mount SOT-89

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