DIODES · Transistors (BJTs) · MPN DXT5551P5-13
No reviews yet — be the first to review DIODES DXT5551P5-13.
| Current - Collector Cutoff | 50uA |
|---|---|
| Transition frequency(fT) | 130MHz |
| Collector - Emitter Voltage VCEO | 160V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 80 |
| Pd - Power Dissipation | 2.25W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 65mV |
Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.25W PowerDI-5