DIODES DXT458P5-13

DIODES · Transistors (BJTs) · MPN DXT458P5-13

No reviews yet — be the first to review DIODES DXT458P5-13.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation2.8W
Number1 NPN
typeNPN
Current - Collector(Ic)300mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

400V 100 1 NPN NPN 300mA PowerDI-5 Single Bipolar Transistors RoHS

Related Transistors (BJTs)