DIODES · Transistors (BJTs) · MPN DXT2013P5-13
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| Current - Collector Cutoff | 500nA |
|---|---|
| Transition frequency(fT) | 125MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 25 |
| Pd - Power Dissipation | 3.2W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 5A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 120mV |
Bipolar (BJT) Transistor PNP 100V 5A 125MHz 3.2W PowerDI-5