DIODES · Transistors (BJTs) · MPN DXT2011P5-13
No reviews yet — be the first to review DIODES DXT2011P5-13.
| Current - Collector Cutoff | 500nA |
|---|---|
| Transition frequency(fT) | 130MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 30 |
| Pd - Power Dissipation | 3.2W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 6A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 125mV |
Bipolar (BJT) Transistor NPN 100V 6A 130MHz 3.2W PowerDI-5