DIODES DXT13003DG-13

DIODES · Transistors (BJTs) · MPN DXT13003DG-13

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO450V
Emitter-Base Voltage VEBO9V
DC Current Gain16
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 450V 1.5A 4MHz 3W Surface Mount SOT-223

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